![]() We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials. The resultant CHPW/CdS heterojunction with a narrowed band gap of 1.45 eV extends the photo-response to the visible light and NIR regions, and shows excellent photocatalytic degradation performance for 2,4-dichlorophenol (97) and a high photocatalytic hydrogen production rate of 578 mol h 1 g 1, much higher than that of pristine HPW and CdS. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. To fabricate the coreshell AuCdS nanoparticles-modified ZnO nanowires photoanode, Au nanoparticles were grown on ZnO by chemical reduction of chloroauric acid with sodium citrate, followed by depositing CdS shell on Au nanoparticles via a sequential chemical bath deposition. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. ![]() By using the site you are agreeing to this as outlined in our privacy notice and cookie policy. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. This website requires cookies, and the limited processing of your personal data in order to function. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping.
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